FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE

The present invention is a field-effect transistor with a two-dimensional channel consisting of a thin sheet of one or more atomic layers of lateral heterostructures based on hybridized graphene. 

Settore:

Energy

Research Institution:

Università di Pisa

Publication number:

WO2013080237A1

Technologies, Systems, Applications:

Process and product technologyes and design,
Sensors,
Advanced materials development and characterization

Technological Priority:

Photonic solutions, micro and nanoelectronics
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